advanced power n-channel enhancement mode electronics corp. power mosfet fast switching performance bv dss 100v single drive requirement r ds(on) 160m full isolation package i d 9a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol parameter value units rthj-c maximum thermal resistance, junction-case 4.5 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice storage temperature range thermal data total power dissipation 28 -55 to 150 operating junction temperature range -55 to 150 continuous drain current, v gs @ 10v 5.6 pulsed drain current 1 30 parameter rating drain-source voltage 100 gate-source voltage + 20 continuous drain current, v gs @ 10v 200903052 rohs-compliant product 1 AP18T10GI 9 g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for commercial-industrial through hole applications. g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 160 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 5.6 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua drain-source leakage current (t j =125 o c) v ds =80v ,v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =5a - 10 16 nc q gs gate-source charge v ds =80v - 2.5 - nc q gd gate-drain ("miller") charge v gs =10v - 4.5 - nc t d(on) turn-on delay time 2 v ds =50v - 6.5 - ns t r rise time i d =5a - 10 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 13 - ns t f fall time r d =10 - 3.4 - ns c iss input capacitance v gs =0v - 425 680 pf c oss output capacitance v ds =25v - 55 - pf c rss reverse transfer capacitance f=1.0mhz - 33 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =8a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =5a, v gs =0 v , - 53 - ns q rr reverse recovery charge di/dt=100a/s - 130 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP18T10GI
AP18T10GI fig 1. typical output characteristics fig 2. typical output characteristics 0.31 t rr q rr fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 100 140 180 220 260 300 45678910 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t c =25 o c 0 4 8 12 16 20 02468 v ds , drain-to-source voltage (v) i d , drain current (a) v g =4.5v t c =25 o c 10v 7.0v 6.0v 5.0v 0 4 8 12 16 20 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =5.0v 10v 9.0v 8.0v 7.0v 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =5a 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 1.2 1.6 2 2.4 2.8 3.2 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics 0.31 t rr q rr fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP18T10GI 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c rss c oss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 12 14 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =80v i d =5a
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